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AS4C64M32MD2-25BCN 데이터시트(PDF) 27 Page - Alliance Semiconductor Corporation

부품명 AS4C64M32MD2-25BCN
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4.4 Burst Read Command
The Burst Read command is initiated by having CS# LOW, CA0 HIGH, CA1 LOW and CA2 HIGH at the rising edge of
the clock. The command address bus inputs, CA5r-CA6r and CA1f-CA9f, determine the starting column address for
the burst. The Read Latency (RL) is defined from the rising edge of the clock on which the Read Command is issued
to the rising edge of the clock from which the tDQSCK delay is measured. The first valid datum is available RL * tCK +
tDQSCK + tDQSQ after the rising edge of the clock where the Read Command is issued. The data strobe output is
driven LOW tRPRE before the first rising valid strobe edge. The first bit of the burst is synchronized with the first rising
edge of the data strobe. Each subsequent data-out appears on each DQ pin edge aligned with the data strobe. The
RL is programmed in the mode registers.
Timings for the data strobe are measured relative to the crosspoint of DQS and its complement, DQS#.
CK#
CK
DQS#
DQS
DQ
RL-1
RL
RL+BL/2
tCH
tCL
tLZ(DQS)
tRPRE
tDQSCKmax
tRPST
tHZ(DQS)
DOUT
DOUT
DOUT
DOUT
tQH
tDQSQmax
tQH
tDQSQmax
tHZ(DQ)
tLZ(DQ)
Transitioning data
Figure 4.4 — Data output (read) timing (tDQSCKmax)
NOTE 1 tDQSCK may span multiple clock periods.
NOTE 2 An effective Burst Length of 4 is shown.
CK#
CK
DQS#
DQS
DQ
RL-1
RL
RL+BL/2
tCH
tCL
tRPRE
tDQSCKmin
tRPST
tHZ(DQS)
DOUT
DOUT
DOUT
DOUT
tQH
tDQSQmax
tQH
tDQSQmax
tHZ(DQ)
tLZ(DQ)
tLZ(DQS)
Transitioning data
Figure 4.5 — Data output (read) timing (tDQSCKmin)
NOTE 1 An effective Burst Length of 4 is shown.
AS4C64M32MD2-25BCN
AS4C128M16MD2-25BCN
Confidential
- 27/129 -
Rev.1.0 July 2016



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