M950X0-W datasheet(33/46 Pages) STMICROELECTRONICS

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M950x0-W M950x0-R M950x0-DF

DC and AC parameters

Table 16. DC characteristics (M950x0-W, device grade 6)

Symbol

Parameter

Test conditions in addition to those

defined in Table 9

Min.

Max.

Unit

ILI

Input leakage

current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage

current

S = VCC, VOUT = VSS or VCC

-± 2

µA

ICC

Supply current

(Read)

VCC = 2.5 V, fC = 5 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-2

VCC = 2.5 V, fC = 10 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-2

VCC = 5.5 V, fC = 20 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-5 (1)

1. Only for the devices identified by process letter K.

ICC0(2)

2. Characterized only, not tested in production.

Supply current

(Write)

During tW, S = VCC, 2.5 V < VCC < 5.5 V

ICC1

Supply current

(Standby)

S = VCC, VCC = 5.5 V,

VIN = VSS or VCC,

-3(3)

3. 2 µA for the devices identified by process letter G or S.

µA

S = VCC, VCC = 2.5 V,

VIN = VSS or VCC,

-2 (4)

4. 1 µA for the devices identified by process letter G or S.

VIL

Input low voltage

–0.45

0.3 VCC

VIH

Input high voltage

0.7 VCC

VCC+1

VOL

Output low voltage

IOL = 1.5 mA, VCC = 2.5 V

0.4

VOH

Output high voltage

VCC = 2.5 V and IOH = 0.4 mA or

VCC = 5 V and IOH = 2 mA

0.8 VCC

-V

VRES(2)

Internal reset

threshold voltage

-1.0(5)

5. 0.5 V with the device identified by process letter K.

1.65(6)

6. 1.5 V with the device identified by process letter K.

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