| 전자부품 데이터시트 검색엔진 |
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OA1NP 데이터시트(PDF) 6 Page - STMicroelectronics |
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OA1NP 데이터시트(HTML) 6 Page - STMicroelectronics |
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6 / 31 page ![]() Electrical characteristics OA1NP, OA2NP, OA4NP 6/31 DocID025993 Rev 2 SR Slew rate (10 % to 90 %) RL = 1 M, CL = 60 pF Vout = 0.3 V to (VCC+ - 0.3 V) 3V/ms en Equivalent input noise voltage f = 100 Hz 265 f = 1 kHz 265 e n Low-frequency peak-to- peak input noise Bandwidth: f = 0.1 to 10 Hz 9 µVpp in Equivalent input noise current f = 100 Hz 0.64 f = 1 kHz 4.4 trec Overload recovery time 100 mV from rail in comparator RL = 100 k, VID = ±VCC -40 °C < T< 85 °C 30 µs 1. Typical value is based on the V io drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. 2. Guaranteed by design. Table 4. Electrical characteristics (continued) Symbol Parameter Conditions Min. Typ. Max. Unit nV Hz ------------ fA Hz ------------ |
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