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OA1NP 데이터시트(PDF) 18 Page - STMicroelectronics

부품명 OA1NP
상세설명  Rail-to-rail input and output
PDF  31 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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OA1NP 데이터시트(HTML) 18 Page - STMicroelectronics

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Application information
OA1NP, OA2NP, OA4NP
18/31
DocID025993 Rev 2
4.4
Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used:
Voltage acceleration, by changing the applied voltage
Temperature acceleration, by changing the die temperature (below the maximum
junction temperature allowed by the technology) with the ambient temperature.
The voltage acceleration has been defined based on JEDEC results, and is defined using
Equation 2.
Equation 2
Where:
AFV is the voltage acceleration factor
is the voltage acceleration constant in 1/V, constant technology parameter (= 1)
VS is the stress voltage used for the accelerated test
VU is the voltage used for the application
The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3.
Equation 3
Where:
AFT is the temperature acceleration factor
Ea is the activation energy of the technology based on the failure rate
k is the Boltzmann constant (8.6173 x 10-5 eVk-1)
TU is the temperature of the die when VU is used (K)
TS is the temperature of the die under temperature stress (K)
The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and
the temperature acceleration factor (Equation 4).
Equation 4
AF is calculated using the temperature and voltage defined in the mission profile of the
product. The AF value can then be used in Equation 5 to calculate the number of months of
use equivalent to 1000 hours of reliable stress duration.
A
FV
e
 V
S
V
U
–

=
A
FT
e
E
a
k
------
1
T
U
------
1
T
S
------
–


=
A
F
A
FT
A
FV
=



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