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R5F104LED 데이터시트(PDF) 123 Page - Renesas Technology Corp

부품명 R5F104LED
상세설명  True Low Power Platform
PDF  213 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F104LED 데이터시트(HTML) 123 Page - Renesas Technology Corp

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RL78/G14
2. ELECTRICAL SPECIFICATIONS (TA = -40 to +85
°C)
R01DS0053EJ0330 Rev. 3.30
Page 123 of 208
Aug 12, 2016
2.7
RAM Data Retention Characteristics
Note
The value depends on the POR detection voltage. When the voltage drops, the RAM data is retained before a POR reset
is effected, but RAM data is not retained when a POR reset is effected.
2.8
Flash Memory Programming Characteristics
Note 1.
1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite.
Note 2.
When using flash memory programmer and Renesas Electronics self-programming library
Note 3.
These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics
Corporation.
2.9
Dedicated Flash Memory Programmer Communication (UART)
(TA = -40 to +85°C, VSS = 0V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Data retention supply voltage
VDDDR
1.46 Note
5.5
V
(TA = -40 to +85°C, 1.8 V
≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
System clock frequency
fCLK
1.8 V
≤ VDD ≤ 5.5 V
1
32
MHz
Number of code flash rewrites
Notes 1, 2, 3
Cerwr
Retained for 20 years
TA = 85°C
1,000
Times
Number of data flash rewrites
Notes 1, 2, 3
Retained for 1 year
TA = 25°C
1,000,000
Retained for 5 years
TA = 85°C
100,000
Retained for 20 years
TA = 85°C
10,000
(TA = -40 to +85°C, 1.8 V
≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Transfer rate
During serial programming
115,200
1,000,000 bps
VDD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention
Operation mode
VDDDR



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