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GL640USB 데이터시트(PDF) 34 Page - List of Unclassifed Manufacturers |
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GL640USB 데이터시트(HTML) 34 Page - List of Unclassifed Manufacturers |
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34 / 39 page ![]() Revision 1.1 Jun. 7, 1999 -33- GL640USB, GL640USB-A 1 11 1..Electrical Characteristics 11.1 Absolute Maximum Ratings (Voltages referenced to GND) SYMBOL Description MIN MAX VCC DC supply voltage -0.5V +7V VI DC input voltage -0.5V VCC+0.5V VI/O DC input voltage range for I/O -0.5V VCC+0.5V VAI/O DC input voltage for USB D+/D- pins -0.5 VCC+0.5V VI/OZ DC voltage applied to outputs in High Z state -0.5V VCC+0.5V VESD static discharge voltage 4000V 11.2 DC Characteristics (Digital Pins) SYMBOL Description MIN TYP MAX UNIT PD Power Dissipation 9 10 11 mA VDD Power Supply Voltage 4.5 5.0 5.5 V IO DC output sink current excluding D+/D-/VCC/GND 4 mA VIL LOW level input voltage 0.9 V VIH HIGH level input voltage 2.0 V VTLH LOW to HIGH threshold voltage 1.7 1.8 2.0 V VTHL HIGH to LOW threshold voltage 0.9 1.1 1.3 V VHYS Hysteresis voltage 0.6 0.7 0.85 V VOL LOW level output voltage when IOL=4mA 0.4 V VOH HIGH level output voltage when IOH=4mA 2.4 V IOLK Leakage current for pads with internal pull up or pull down resistor 38 µA RDN Pad internal pulldown resister (Note 1) 20K 28K 41K Ohms RUP Pad internal pullup resister (Note 2) 24K 33K 48K Ohms |
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