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PI5L100LE 데이터시트(PDF) 2 Page - Pericom Semiconductor Corporation |
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PI5L100LE 데이터시트(HTML) 2 Page - Pericom Semiconductor Corporation |
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2 / 13 page ![]() PI5L100 Wide-Bandwidth,Low-Voltage LanSwitch Quad 2:1 Mux/Demux 2 PS7031F 09/17/04 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 Storage Temperature ........................................................ –65°Cto+150°C Ambient Temperature with Power Applied ............................ 0°Cto+70°C Supply Voltage to Ground Potential ................................... –0.5Vto+7.0V DC Input Voltage ................................................................ –0.5Vto+7.0V DC Output Current ......................................................................... 120mA Power Dissipation .............................................................................. 0.5W Note: Stresses greater than those listed under MAXIMUM RAT- INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC Electrical Characteristics (Over the Operating Range, TA = 0°C to +70°C, VCC = 6.2V, +5%, – 2%) Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 6.2V, TA = 25°C ambient temperature. 3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. 4. VON (min) value is at VCC = 6.1V, TA = 70°C. 5. The expected AC VON value is about 125 mV higher than the DC VON value using the similar test circuit in Figure 10 with VIN swing from 0.0V to 4.5V at 10 MHz sine wave. 6. The value of RON of M1 is calculated with the equvalent mathematical formula of the test circuit in Figure 10. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) r e t e m a r a Pn o i t p i r c s e Ds n o i t i d n o C t s e T. n i Mp y T ) 2 ( . x a Ms t i n U V H I e g a tl o V H G I H t u p n Il e v e L H G I H c i g o L d e e t n a r a u G0 . 2— — V V L I e g a tl o V W O L t u p n Il e v e L W O L c i g o L d e e t n a r a u G5 . 0 –— 8 . 0 A µ I H I t n e r r u C H G I H t u p n IV C C V ,. x a M = N I V = C C —— 1 ± I L I t n e r r u C W O L t u p n IV C C V ,. x a M = N I= D N G— — 1 ± I H Z O t n e r r u C t u p t u O e c n a d e p m I h g i H0 ≤ B , A ≤ V C C —— 1 ±V V K I e g a tl o V e d o i D p m a l CV C C I ,. n i M = N I A m 8 1 – =— 7 . 0 –2 . 1 – A m I S O t n e r r u C ti u c ri C t r o h S ) 3 ( V = ) A ( B , V 0 = ) B ( A C C 0 0 1— — VH s n i P l o r t n o C t a s i s e r e t s y H t u p n I —0 5 1— V m V N O e g a tl o V n O h c ti w SV N I R , 0 1 e r u g i F e e S , W O L = E , V 5 . 4 = L 0 0 1 = Ω 7 . 3 ) 4 ( 6 0 . 4 ) 5 ( —V R N O ) 6 ( e c n a t s i s e R n O h c ti w S 1 MV m o r f d e t a l u c l a C N O 9 12 . 1 1— Ω R N O ) 7 ( e c n a t s i s e R n O h c ti w S 2 MV N I R , 0 1 e r u g i F e e S , W O L = E , V 5 . 4 = L 0 0 1 = Ω 0 . 20 . 3— ∆R N O h c t a M e c n a t s i s e R n OV N I W O L = E , V 5 . 4 =— 0 . 1— 7. This parameter is determined by device characterization but is not production tested. RON (M1) = were with RON (M2) = 3 ohms VIN – VON ION ION = VON RL + RON (M2) |
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