# IRFPG30 Power MOSFET

## Features
· Dynamic dV/dt and repetitive avalanche rated
· Isolated central mounting hole
· Fast switching, easy paralleling, simple drive requirements
· RoHS compliance options available

## Description
· Third generation Power MOSFET for fast switching, rugged design, and cost-effectiveness
· TO-247AC package preferred for commercial/industrial high-power applications
· Superior to TO-218 package with isolated mounting hole and increased creepage distance

## Product Summary
· VDS: 1000V
· RDS(on) (VGS = 10V): 5.0 Ω
· Qg (max.): 80 nC
· Configuration: Single N-Channel MOSFET

## Absolute Maximum Ratings (TC = 25°C)
· Drain-source voltage (VDS): 1000V
· Gate-source voltage (VGS): ±20V
· Continuous drain current (ID): 3.1A @ 25°C, 2.0A @ 100°C
· Pulsed drain current (IDM): 12A
· Single pulse avalanche energy (EAS): 180mJ
· Maximum power dissipation (PD): 125W @ 25°C

## Thermal Resistance
· Maximum junction-to-ambient (RthJA): 40°C/W
· Maximum junction-to-case (RthJC): 1.0°C/W

## Specifications (TJ = 25°C)
· Drain-source breakdown voltage (VDS): 1000V
· Gate-source threshold voltage (VGS(th)): 2.0-4.0V
· Drain-source on-state resistance (RDS(on)): 5.0Ω @ VGS=10V, ID=1.9A
· Forward transconductance (gfs): 2.4S @ VDS=50V, ID=1.9A

## Package Information
· Package: TO-247AC
· Multiple versions available (FACILITY CODE = 9, Y, N)
· Refer to datasheet for detailed dimensions and specifications

## Notes
· Repetitive avalanche rating is pulse width limited
· Device is not designed for life-saving or life-sustaining applications without specific authorization.