IRFPG30

www.vishay.com

Vishay Siliconix

S22-0057-Rev. C, 31-Jan-2022

1

Document Number: 91252

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt rated

• Repetitive avalanche rated

• Isolated central mounting hole

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

Note

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The

TO-247AC

package

is

preferred

for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because of its isolated mounting hole. It also

provides greater creepage distance between pins to meet

the requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

PRODUCT SUMMARY

1000

5.0

80

10

42

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

Available

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFPG30PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

1000

V

Gate-source voltage

± 20

Continuous drain current

3.1

A

2.0

12

Linear derating factor

1.0

W/°C

180

mJ

3.1

A

13

mJ

Maximum power dissipation

125

W

dV/dt

1.0

V/ns

Operating junction and storage temperature range

-55 to +150

°C

Soldering recommendations (peak temperature)

for 10 s

Mounting torque

6-32 or M3 screw

10

lbf · in

1.1

N · m