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STGY80H65DFB 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STGY80H65DFB
상세설명  Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
PDF  22 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGY80H65DFB 데이터시트(HTML) 5 Page - STMicroelectronics

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STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB
Electrical characteris-
22
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
-84
-
ns
tr
Current rise time
-
52
-
ns
(di/dt)on
Turn-on current slope
-
1270
-
A/µs
td(off)
Turn-off delay time
-
280
-
ns
tf
Current fall time
-
31
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
2.1
-
mJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
1.5
-
mJ
Ets
Total switching losses
-
3.6
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
-77
-
ns
tr
Current rise time
-
51
-
ns
(di/dt)on
Turn-on current slope
-
1270
-
A/µs
td(off)
Turn-off delay time
-
328
-
ns
tf
Current fall time
-
30
-
ns
Eon
(1)
Turn-on switching losses
-
4.4
-
mJ
Eoff
(2)
Turn-off switching losses
-
2.1
-
mJ
Ets
Total switching losses
-
6.5
-
mJ
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 80 A, VR = 400 V,
di/dt= 1000 A/µs
,
VGE = 15 V,
see Figure 28
-85
-
ns
Qrr
Reverse recovery charge
-
1105
-
nC
Irrm
Reverse recovery current
-
26
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
722
-
A/µs
Err
Reverse recovery energy
-
267
-
µJ
trr
Reverse recovery time
IF = 80 A, VR = 400 V,
di/dt= 1000 A/µs
,
VGE = 15 V,
TJ = 175 °C, see Figure 28
-
149
-
ns
Qrr
Reverse recovery charge
-
4920
-
nC
Irrm
Reverse recovery current
-
66
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
546
-
A/µs
Err
Reverse recovery energy
-
1172
-
µJ



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