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STGY80H65DFB 데이터시트(PDF) 8 Page - STMicroelectronics

부품명 STGY80H65DFB
상세설명  Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
PDF  22 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGY80H65DFB 데이터시트(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, ST-
8/22
DocID024366 Rev 6
Figure 14. Switching loss vs. temperature
Figure 15. Switching loss vs. gate resistance
E
1500
1000
25
TJ(°C)
(μJ)
50
75
100 125
2000
2500
3000
VCC= 400V, VGE = 15V
IC= 80A, Rg= 10Ω
150
EOFF
EON
175
0
3500
4000
4500
GIPD160920131504FSR
E
2600
1800
1000
2RG(Ω)
(μJ)
610
14
18
3400
4200
5000
VCC= 400V, VGE = 15V
IC= 80A, TJ= 175°C
EON
EOFF
GIPD160920131208FSR
Figure 16. Switching loss vs. collector current
Figure 17. Switching loss vs. collector emitter
voltage
E
2000
1000
0
0
IC(A)
(μJ)
20
40
60
80
3000
4000
5000
VCC= 400V, VGE = 15V
RG= 10Ω, TJ= 175°C
100 120 140
6000
7000
8000
9000
EON
EOFF
GIPD160920131436FSR
E
3000
2000
1000
150
VCE(V)
(μJ)
200 250 300 350
4000
5000
6000
TJ= 175°C, VGE = 15V
IC= 80A, Rg= 10Ω
400
EOFF
EON
450
GIPD160920131524FSR
Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance
t
100
10
1
IC(A)
(ns)
20
40
60
80
TJ= 175°C, VGE = 15V
VCC= 400V, Rg= 10Ω
100
tf
tdon
120
tr
tdoff
140
GIPD160920131533FSR
t
100
10
Rg(Ω)
(ns)
48
TJ= 175°C, VGE = 15V
VCC= 400V, IC= 80A
12
tr
tdon
tf
tdoff
16
20
GIPD160920131539FSR



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