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PC755CMZFU366LE 데이터시트(PDF) 17 Page - ATMEL Corporation |
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PC755CMZFU366LE 데이터시트(HTML) 17 Page - ATMEL Corporation |
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17 / 50 page ![]() 17 PC755/745 2138D–HIREL–06/03 4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package. 5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1) with the calculated case temperature. The actual value of RÉýJC for the part is less than 0.1 °C/W. Note: Refer to Section “Thermal Management Information“ page 19 for more details about thermal management. Package Thermal Characteristics for HiTCE Table 7 provides the package thermal characteristics for the PC755, HiTCE. Notes: 1. Simulation, no convection air flow. 2. Per JEDEC JESD51-6 with the board horizontal. The board designer can choose between several types of heat sinks to place on the PC755. There are several commercially-available heat sinks for the PC755 provided by the following vendors: For the exposed-die packaging technology, shown in Table 5, the intrinsic conduction thermal resistance paths are as follows: • The die junction-to-case (or top-of-die for exposed silicon) thermal resistance • The die junction-to-ball thermal resistance Figure 6 depicts the primary heat transfer path for a package with an attached heat sink mounted to a printed-circuit board. Heat generated on the active side of the chip is conducted through the silicon, then through the heat sink attach material (or thermal interface material), and finally to the heat sink where it is removed by forced-air convection. Since the silicon thermal resistance is quite small, for a first-order analysis, the tempera- ture drop in the silicon may be neglected. Thus, the heat sink attach material and the heat sink conduction/convective thermal resistances are the dominant terms. Table 7. Package Thermal Characteristics for HiTCE Package Characteristic Symbol Value Unit PC755 HiTCE Junction-to-bottom of balls(1) R θ J 6.8 °C/W Junction-to-ambient thermal resistance, natural convection, four-layer (2s2p) board(1)(2) R θ JMA 20.7 °C/W Junction to board thermal resistance R θ JB 11.0 °C/W Table 8. Package Thermal Characteristics for CI-CGA Characteristic Symbol Value Unit PC755 CI-CGA Junction to board thermal resistance R θ JB 8.42 °C/W |
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