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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ST10F166 데이터시트(PDF) 11 Page - STMicroelectronics |
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ST10F166 데이터시트(HTML) 11 Page - STMicroelectronics |
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11 / 62 page  ST10F166 11/62 4 FLASH MEMORY The ST10F166 provides, in addition to the RAM, 32 k bytes of Electrically Erasable and reprogram-mable non-volatile (FLASH) memory. This memory is organised as 8K x 32 bit allowing a complete instruction to be read during one instruction fetch cy- cle. Data values stored can be read as 16 bit operands using all addressing modes of ST10F166 instruction set. The FLASH memory is located in segment 0 (0 to 07FFFh) during reset, and thus contains the reset and interrupt vectors. To provide full flexibility in the use of the ST10F166, the FLASH memory may be remapped to segment ~ ( 0000 to 17FFFh) during initialization. This allows the interrupt vector to be programmed from external memory, while retaining the common routines and constants programmed into the FLASH memory. For ease of program updating, the FLASH memory is organised into 4 banks, each of which may be independently Erased. Table 2. FLASH memory Bank Organisation Bank Addresses (Segment 0) Size (bytes) 0 1 2 3 00000h to 02FFFh 03000h to 05FFFh 06000h to 077FFh 07800h to 07FFFh 12K 12K 6K 2K |
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