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STV0684 데이터시트(PDF) 29 Page - STMicroelectronics |
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STV0684 데이터시트(HTML) 29 Page - STMicroelectronics |
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29 / 49 page ![]() 29/49 STV0684 Electrical Characteristics 4.5.4 SDRAM timing description 4.5.4.1 Read/Write timing diagrams for external synchronous DRAM Figure 5: SDRAM read timing Figure 6: SDRAM write timing DCLK Command DQM A0-9, BA, A10 ACTIVE READ NOP PRECHARGE NOP ROW COLUMN ROW DOUT M DOUT M + 1 DOUT M + 2 DOUT M + 3 DQ CAS Latency tCK tRCD tRC CKE tRAS DQ sample DQ sample DQ sample DQ sample tRP tCMS tCMH tAS tAH tCL tCH tCMS tCMH tAC tOH (RAS, CAS, WE) A11-12 DCLK Command DQM A0-9, A10 SDRAM Write Timing ACTIVE WRITE NOP PRECHARGE NOP ROW COLUMN ROW DIN M DIN M + 1 DIN M + 2 DIN M + 3 DQ tCK tRCD tRC CKE tRAS tRP tCMS tCMH tAS tAH tCL tCH tCMS tCMH tDS tDH (RAS, CAS, WE) A11-12 |
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