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S1M8822X01-R0T0 데이터시트(PDF) 9 Page - Samsung semiconductor |
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S1M8822X01-R0T0 데이터시트(HTML) 9 Page - Samsung semiconductor |
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9 / 22 page ![]() INTERGER RF/IF DUAL PLL S1M8821/22/23 9 ABSOLUTE MAXIMUM RATINGS ELECTROSTATIC CHARACTERISTICS These devices are ESD sensitive. These devices must be handled in the ESD protected environment. Characteristic Symbol Value Unit Power Supply Voltage VDD 0 to 4.0 V Power Dissipation PD 600 mW Operating Temperature Ta -40 to +85oC °C Storage Temperature TSTG -65 to +150oC °C Characteristic Pin No. ESD level Unit Human Body Model All < ± 2000 V Machine Model All < ± 300 V Charged Device Model All < ± 800 V |
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