| 전자부품 데이터시트 검색엔진 |
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GD5F2GQ4REZFS 데이터시트(PDF) 8 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD5F2GQ4REZFS 데이터시트(HTML) 8 Page - GigaDevice Semiconductor (Beijing) Inc. |
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8 / 57 page ![]() SPI(x1/x2/x4) NAND Flash 2G 8 3 ARRAY ORGANIZATION Each device has Each block has Each page has 2G 256M+16M 128K+8K 2K+128 bytes 2048 x 64 64 - pages 2048 - - blocks Figure3-1. Array Organization 2048 128 2048 128 1 block 1 block = (2K + 128 bytes) x 64 pages = (128K + 8K) bytes 1 page = (2K + 128 bytes) Cache Register Data Register SO SI Per device: 2Gb: 2048blocks 1 device: For 2Gb = (128K + 8K) bytes x 2048 blocks = 1Gb Internal ECC = OFF 2048 64 2048 64 1 block 1 block = (2K + 64 bytes) x 64 pages = (128K + 4K) bytes 1 page = (2K + 64 bytes) Cache Register Data Register SO SI Per device: 2Gb: 2048blocks 1 device: For 2Gb = (128K + 4K) bytes x 2048 blocks = 2Gb Internal ECC= ON Note: 1.When Internal ECC is enabled,user can program the first 64 bytes of the entire 128 bytes spare area and the last 64 bytes of the whole spare area cannot be programed,user can read the entire 128 Byte spare area. 2.When Internal ECC is disabled,user can read and program the entire 128 bytes spare area. |
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