| 전자부품 데이터시트 검색엔진 |
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GD25Q127CFJS 데이터시트(PDF) 58 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q127CFJS 데이터시트(HTML) 58 Page - GigaDevice Semiconductor (Beijing) Inc. |
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58 / 79 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q127C 58 tRST_E CS# High To Next Command After Reset (From Erase) 12 ms tW Write Status Register Cycle Time 5 30 ms tBP1 Byte Program Time (First Byte) 30 60 μs tBP2 Additional Byte Program Time (After First Byte) 2.5 15 μs tPP Page Programming Time 0.5 4 ms tSE Sector Erase Time 50 400 ms tBE Block Erase Time (32K Bytes) 0.16 2 s tBE Block Erase Time (64K Bytes) 0.3 3 s tCE Chip Erase Time (GD25Q127C) 50 150 s Note: 1. Typical value tested at T = 25℃. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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