S29AL008D55BAI011 datasheet(50/55 Pages) SPANSION

50 / 55 page

S29AL008D

S29AL008D_00A3 June 16, 2005

Da t a

S h ee t

2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most

bytes program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program

command. See Table 5, on page 25 for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.

Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Table 13. Latchup Characteristics

Description

Min

Max

Input voltage with respect to VSS on all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to VSS on all I/O pins

–1.0 V

VCC + 1.0 V

VCC Current

–100 mA

+100 mA

Table 14. TSOP, SO, and BGA Pin Capacitance

Parameter

Symbol

Parameter Description

Test Setup

Package

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

TSOP, SO

7.5

BGA

4.2

5.0

COUT

Output Capacitance

VOUT = 0

TSOP, SO

8.5

BGA

5.4

6.5

CIN2

Control Pin Capacitance

VIN = 0

TSOP, SO

7.5

BGA

3.9

4.7

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