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S29AL008D55BAI011 데이터시트(PDF) 1 Page - SPANSION |
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S29AL008D55BAI011 데이터시트(HTML) 1 Page - SPANSION |
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1 / 55 page ![]() “This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur.” Publication Number S29AL008D_00 Revision A Amendment 3 Issue Date June 16, 2005 This document has not been approved. Sharing this document with non-Spansion employees violates QS9000/TS16949 requirements. S29AL008D 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Data Sheet Distinctive Characteristics Architectural Advantage Single power supply operation — 2.7 to 3.6 volt read and write operations for battery- powered applications Manufactured on 200nm process technology — Compatible with 0.32 µm and 230nm Am29LV160 devices Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: — A hardware method of locking a sector to prevent any program or erase operations within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences Top or bottom boot block configurations available Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses Compatibility with JEDEC standards — Pinout and software compatible with single-power supply Flash — Superior inadvertent write protection Performance Characteristics High performance — Access times as fast as 55 ns — Extended temperature range (-40°C to +125°C) Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current Cycling endurance: 1,000,000 cycles per sector typical Data retention: 20 years typical — Reliable operation for the life of the system Package option 48-ball FBGA 48-pin TSOP 44-pin SO Software Features Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation Hardware Features Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data |
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