STTH2R06 datasheet(1/9 Pages) STMICROELECTRONICS

부품명	STTH2R06

상세설명	HIGH EFFICIENCY ULTRAFAST DIODE

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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Table 1: Main Product Characteristics

IF(AV)

2 A

VRRM

600 V

Tj

175°C

VF (typ)

1 V

trr (typ)

35 ns

STTH2R06

HIGH EFFICIENCY ULTRAFAST DIODE

Table 3: Absolute Ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS) RMS forward voltage

7

A

IF(AV)

Average forward current

δ = 0.5

DO-41

TL = 70°C

2A

SMA

TL = 85°C

SMB

TL = 100°C

SMC

TL = 115°C

IFSM

Surge non repetitive forward current

DO-41

tp = 10ms

sinusoidal

40

A

SMA / SMB / SMC

30

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Operating junction temperature range

-40 to + 175

°C

SMA

STTH2R06A

SMC

STTH2R06S

DO-41

STTH2R06

K

A

SMB

STTH2R06U

June 2005

REV. 2

FEATURES AND BENEFITS

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

DESCRIPTION

The STTH2R06 is using ST Turbo 2 600V planar

Pt doping technology. It is specially suited for

switching mode base drive & transistor circuits.

Packaged in axial, SMA, SMB and SMC, this de-

vice is intended for use in high frequency inverters,

free wheeling and polarity protection.

Table 2: Order Codes

Part Number

Marking

STTH2R06

STTH2R06RL

STTH2R06

STTH2R06A

R6A

STTH2R06U

R6U

STTH2R06S

R62

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