| 전자부품 데이터시트 검색엔진 |
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PM6685 데이터시트(PDF) 10 Page - STMicroelectronics |
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PM6685 데이터시트(HTML) 10 Page - STMicroelectronics |
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10 / 16 page ![]() 4 Electrical characteristics PM6685 10/16 Simbol Parameter Test Condition Min. Typ. Max. Unit High side rise time HGATEx-PHASE from 1V to 4V CLOAD = 3.3nF 20 ns High side fall time 20 Low side rise time LGATEx-PGND from 1V to 4V CLOAD = 8.2nF 40 ns 40 OVP Over voltage threshold Both SMPS sections with respect to VREF. 113 116 120 % UVP Under voltage threshold 66 70 72 % PGOOD3,5 Upper threshold (VFB-VREF) 107 110 113 % Lower threshold (VFB-VREF) 90 92 94 % IPGOOD3,5 PGOOD leakeage current VPGOOD3,5 forced to 5.5V 1 µA VPGOOD3,5 Ouput Low Voltage ISink = 4mA 150 250 mV PGOOD LDO3 Rising voltage threshold 2.58 V Falling voltage threshold 2.55 V Hytseresis 25 mV IPGOOD_LD O3 PGOOD leakeage current VPGOOD LDO3 forced to 5.5V 1 µA VPGOOD_LD O3 Ouput Low Voltage ISink = 4mA 150 250 mV TSDN Shutdown Temperature 150 °C EN3,5 SMPS disabled level 0.8 V SMPS enabled level 2.4 FSEL Frequency selection range Low level 0.5 V Middle level 1.0 VLDO5 -1.5 High level VLDO5 -0.8 LDO3 SEL 3.3V Linear Regulator Selection Pin Always-off level 0.5 V Boostrap level 1.0 VLDO5 -1.5 Always-on level VLDO5 -0.8 SKIP Pulse Skip Mode 0.5 V PWM Mode 1.0 VLDO5 -1.5 Ultrasonic Mode VLDO5 -0.8 Table 6. Electrical characteristics (continued) |
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