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UT6898G-S08-R 데이터시트(PDF) 4 Page - VBsemi Electronics Co.,Ltd

부품명 UT6898G-S08-R
상세설명  Dual N-Channel 20-V (D-S) MOSFET
PDF  9 Pages
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제조업체  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT6898G-S08-R 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.01
0.001
0.1
10
100
TJ = 150 °C
TJ = 25 °C
VSD -Source-to-Drain Voltage (V)
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
ID =5mA
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.03
0.06
0.09
0.12
0.15
012
345
67
8
910
ID =5A
TJ =25 °C
TJ = 125 °C
VGS - Gate-to-Source Voltage (V)
0
10
20
30
40
50
Time (s)
10
1000
0.1
0.01
0.001
100
1
Safe Operating Area, Junction-to-Ambient
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
100 ms
Limited byRDS(on)*
BVDSS Limited
1ms
10 ms
1s
10 s
DC
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
UT6898G-S08-R
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
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