UT6898G-S08-R datasheet(1/9 Pages) VBSEMI

부품명	UT6898G-S08-R

상세설명	Dual N-Channel 20-V (D-S) MOSFET

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Dual N-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % UIS Tested

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Set Top Box

•

Low Current DC/DC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

20

0.0

09 at V

GS = 4.5 V

10

15 nC

0.0

12 at V

GS = 2.5 V

8.0

D1

G1

D1

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

S1

S2

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Package limited, TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

10a

A

TC = 70 °C

7.0

TA = 25 °C

8.1b, c

TA = 70 °C

7.2b, c

Pulsed Drain Current

IDM

44

Continuous Source-Drain Diode Current

TC = 25 °C

IS

3.25

TA = 25 °C

1.88b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

6

Single Pulse Avalanche Energy

EAS

1.45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

2.7

W

TC = 70 °C

1.77

TA = 25 °C

1.78b, c

TA = 70 °C

1.14b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c, d

t

≤ 10 s

RthJA

58

70

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

38

45

UT6898G-S08-R

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

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