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UT6898G-S08-R 데이터시트(PDF) 3 Page - VBsemi Electronics Co.,Ltd

부품명 UT6898G-S08-R
상세설명  Dual N-Channel 20-V (D-S) MOSFET
PDF  9 Pages
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제조업체  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT6898G-S08-R 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
VGS =8 V thru 4 V
VGS =3 V
VGS =2 V
VDS - Drain-to-Source Voltage (V)
0.000
0.005
0.010
0.015
0.020
0.025
0
6
12
18
24
30
VGS =
V
VGS =
V
ID - Drain Current (A)
0
2
4
6
8
10
0.0
1.7
3.4
5.1
6.88.5
VDS =
V
VDS =8V
ID =5A
VDS =15 V
Qg - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0
1234
5
TC = 25 °C
TC =125 °C
TC = - 55 °C
VGS - Gate-to-Source Voltage (V)
Crss
0
110
220
330
440
550
06
12
18
24
30
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
0.7
0.9
1.1
1.3
1.5
1.7
- 50
- 25
0
25
50
75
100
125
150
ID =5A
VGS =
V
VGS =
V
TJ -Junction Temperature (°C)
4.5
2.5
10
2.5
4.5
UT6898G-S08-R
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
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