ASL4501SHN

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© NXP Semiconductors N.V. 2018. All rights reserved.

Product data sheet

Rev. 2 — 10 January 2018

32 of 43

NXP Semiconductors

ASL4501SHN

Four-phase boost converter

9.

Limiting values

[1]

VGG1 and VGG2 are IC internally connected (shorted).

[2]

HBM according to AEC-Q100-002 (100 pF, 1.5 k

).

[3]

CDM according to AEC-Q100-011 (field induced charge; 4 pF).

10. Thermal characteristics

[1]

In accordance with JEDEC, JESD51-2, JESD51-5 and JESD51-7 with natural convection on 2s2p board. Board with two inner copper

layers (thickness: 35

m) and thermal via array, under the exposed pad connected to the first inner copper layer.

Table 43.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

battery supply voltage

EN = LOW

0.3

+60

V

EN = HIGH

0.3

+40

V

voltage on pin VCC

0.3

+5.5

V

ground supply voltage

voltage between ground pins

0.6

+0.6

V

voltage on feedback pins

FB1 and FB2

0.3

+90

V

output voltage

programmed target voltage according to

registers 0x03h and 0x04h

10

80

V

digital input voltage

voltage on digital pins SDO, SDI, CSB, SCLK

and EN

0.3

+5.5

V

voltage on pin VGG

VGG1

[1]

0.3

+20

V

VGG2

[1]

0.3

+20

V

sense voltage

voltage on sense pins SNH1, SNH2, SNH3,

SNH4, SNL1, SNL2, SNL3 and SNL4

0.3

+1.8

V

voltage on gate pins

voltage on gate pins G1, G2, G3 and G4

0.3

+10

V

junction temperature

40

+175

C

storage temperature

55

+175

C

electrostatic discharge voltage

[2]

2+2

kV

[3]

500

+500

V

Table 44.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

total thermal resistance

[1] 37

K/W