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LPC5410X 데이터시트(PDF) 46 Page - NXP Semiconductors |
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LPC5410X 데이터시트(HTML) 46 Page - NXP Semiconductors |
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46 / 95 page ![]() LPC5410x All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 2.11 — 19 September 2019 46 of 95 NXP Semiconductors LPC5410x 32-bit ARM Cortex-M4/M0+ microcontroller [1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 C). [2] Characterized through bench measurements using typical samples. VDD = 1.62 V [3] Guaranteed by characterization, not tested in production. VDD = 2.0 V Table 12. Static characteristics: Power consumption in deep sleep, power down, and deep power-down modes Tamb = 40 C to +105 C, 1.62 V VDD 2.0 V; unless otherwise specified. Symbol Parameter Conditions Min Typ[1][2] Max[3] Unit IDD supply current Deep sleep mode; all SRAM on: Tamb = 25 C [2] - 235 380 A Tamb = 105 C - - 1.9 mA Power down mode; first 8 kB in SRAM0 powered: Tamb = 25 C [2] -4 8 A Tamb = 105 C- 110 A SRAM0 (64 kB) powered - 6.7 - A SRAM0 (64 kB), SRAM1 (32 kB) powered - 7.8 - A SRAM0 (64 kB), SRAM1 (32 kB), SRAM2 (8 kB) powered - 8.2 - A Deep power-down mode; RTC oscillator input grounded (RTC oscillator disabled) Tamb = 25 C [2] - 160 340 nA Tamb = 105 C- 14 A RTC oscillator running with external crystal - 240 - nA |
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