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JS28F320J3A-150 데이터시트(PDF) 20 Page - Intel Corporation

부품명 JS28F320J3A-150
상세설명  Intel StrataFlash Memory (J3)
PDF  72 Pages
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제조업체  INTEL [Intel Corporation]
홈페이지  http://www.intel.com
Logo INTEL - Intel Corporation

JS28F320J3A-150 데이터시트(HTML) 20 Page - Intel Corporation

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256-Mbit J3 (x8/x16)
20
Datasheet
6.2
DC Voltage Characteristics
ICCE
VCC Block Erase or Clear
Block Lock-Bits Current
35
70
mA
CMOS Inputs, VPEN = VCC
1,4
40
80
mA
TTL Inputs, VPEN = VCC
ICCWS
ICCES
VCC Program Suspend or
Block Erase Suspend
Current
10
mA
Device is enabled (see Table 13)1,5
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
2. Includes STS.
3. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.
4. Sampled, not 100% tested.
5. ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend
mode, the device’s current draw is ICCR and ICCWS
Table 7.
DC Voltage Characteristics
Symbol
Parameter
Min
Max
Unit
Test Conditions
Notes
VIL
Input Low Voltage
–0.5
0.8
V
2, 6
VIH
Input High Voltage
2.0
VCCQ
+ 0.5
V2,6
VOL
Output Low Voltage
0.4
V
VCCQ = VCCQ Min
IOL = 2 mA
1,2
0.2
V
VCCQ = VCCQ Min
IOL = 100 µA
VOH
Output High Voltage
0.85
×
VCCQ
V
VCCQ = VCCQ Min
IOH = –2.5 mA
1,2
VCCQ
–
0.2
V
VCCQ = VCCQ Min
IOH = –100 µA
VPENLK
VPEN Lockout during Program,
Erase and Lock-Bit Operations
2.2
V
2,3,4,7
Table 6.
DC Current Characteristics (Sheet 2 of 2)
VCCQ
2.7 - 3.6V
Test Conditions
Notes
VCC
2.7 - 3.6V
Symbol
Parameter
Typ
Max
Unit



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