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L99LD02 데이터시트(PDF) 53 Page - STMicroelectronics |
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L99LD02 데이터시트(HTML) 53 Page - STMicroelectronics |
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53 / 66 page ![]() DS12448 Rev 3 53/66 L99LD02 Electrical specifications 64 6.4.2 Boost controller IS VS operating current Device in active mode Boost active in open loop VDD = 5 V VS = 13.5 V VBST_OUT = 25 V BST_FREQ= 100 kHz 22 mA V3V3 Output Voltage of 3V3 LDO Vs > 4V Iload= 1mA; C3V3 = 1µF 3.2 3.3 3.4 V I3V3_LIM Current capability of 3V3 LDO Vs = 13.5V V3V3 pin forced to 2.5V 40 mA VPOR,H Power-on reset high state Ramp on V3V3 from 2.8 V to 2 V 2.35 2.7 V VPOR,HYST Power-on reset hysteresis 0.035 V Table 34. Supply (continued) Symbol Parameter Test conditions Min Typ Max Unit Table 35. Boost gate driver Symbol Parameter Test conditions Min Typ Max Unit tG0x Gate driver output rise and fall time VS = 13.5 V CG0x = 4.7 nF VGS_G0x rising from 10% ÷ 90% 100 ns VS = 13.5 V; CG0x = 4.7 nF VGS_G0x falling from 90% ÷ 10% 100 ns VGOx_H Gate driver High output voltage 0.9 * V10V V10V V VGOx_L Gate driver Low output voltage 0.3 V RONHS High−side switch impedance VS = 13.5 V VDD = 5 V VSN = 0 V Iload = 100 mA (current sunk from GOx pin) 2.5 5.2 Ω RONLS Low−side switch impedance VS = 13.5 V VDD = 5 V VSN = 0 V Iload = 100 mA (current sourced from GOx pin) 0.7 1.6 Ω |
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