STM32L552CCT3PTR datasheet(217/340 Pages) STMICROELECTRONICS

217 / 340 page

DS12737 Rev 6

217/340

STM32L552xx

Electrical characteristics

307

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 36. Typical application with a 32.768 kHz crystal

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden

to add one.

Table 89. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

1. Guaranteed by design.

Symbol

Parameter

Conditions(2)

2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator

design guide for ST microcontrollers”.

Min

Typ

Max

Unit

IDD(LSE) LSE current consumption

LSEDRV[1:0] = 00

Low drive capability

-250

LSEDRV[1:0] = 01

Medium low drive capability

-315

LSEDRV[1:0] = 10

Medium high drive capability

-500

LSEDRV[1:0] = 11

High drive capability

-630

Gmcritmax

Maximum critical crystal

LSEDRV[1:0] = 00

Low drive capability

0.5

µA/V

LSEDRV[1:0] = 01

Medium low drive capability

0.75

LSEDRV[1:0] = 10

Medium high drive capability

1.7

LSEDRV[1:0] = 11

High drive capability

2.7

tSU(LSE)(3)

tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized

32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly

with the crystal manufacturer

Startup time

VDD is stabilized

MS30253V2

OSC32_IN

OSC32_OUT

Drive

programmable

amplifier

fLSE

32.768 kHz

resonator

Resonator with integrated

capacitors

CL1

CL2

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