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MC56F81663 데이터시트(PDF) 53 Page - NXP Semiconductors |
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MC56F81663 데이터시트(HTML) 53 Page - NXP Semiconductors |
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53 / 73 page ![]() Figure 10. RC Oscillator Temperature Variation (Typical) After Trim (Preliminary) 11.4 Memories and memory interfaces 11.4.1 Flash electrical specifications This section describes the electrical characteristics of the flash memory module. 11.4.1.1 Flash timing specifications — program and erase The following specifications represent the amount of time the internal charge pumps are active and do not include command overhead. Table 24. NVM program/erase timing specifications Symbol Description Min. Typ. Max. Unit Notes thvpgm4 Longword Program high-voltage time — 7.5 18 μs — Table continues on the next page... System modules MC56F81xxx, Rev. 1.1, 12/2020 NXP Semiconductors 53 |
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