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UT60N03L-TN3-R 데이터시트(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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UT60N03L-TN3-R 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 6 page ![]() TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.4 0.8 1.2 1.6 2.0 -50 -25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 100 10 1 0.3 0.6 0.9 1.2 1.5 VGS = 4.5 V ID = 20 A TJ = 25_C TJ = 150_C 0 THERMAL RATINGS 0 10 20 30 40 50 0 25 50 75 100 125 150 175 Safe Operating Area VDS - Drain-to-Source Voltage (V) 200 10 0.1 1 10 100 Limited by rDS(on) 1 100 TC = 25_C Single Pulse Maximum Avalanche Drain Current vs. Case Temperature TC - Case Temperature (_C) 1 ms 10 ms 100 ms dc 10 ms 100 ms Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10-4 10-3 10-2 10-1 100 600 0.2 0.1 Duty Cycle = 0.5 1 10 0.05 0.02 Single Pulse E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UT60N03L-TN3-R 4 |
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