UT60N03L-TN3-R datasheet(1/6 Pages) VBSEMI

부품명	UT60N03L-TN3-R

상세설명	N-Channel 20-V (D-S)175 C MOSFET

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제조업체	VBSEMI [VBsemi Electronics Co.,Ltd]

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FEATURES

D TrenchFETr Power MOSFET

D 175_C Maximum Junction Temperature

D 100% Rg Tested

N-Channel 20-V (D-S)175 _C MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)a

20

0.006 @ VGS = 4.5 V

65

20

0.008 @ VGS = 2.5 V

45

D

G

S

N-Channel MOSFET

TO-252

S

GD

Top View

Drain Connected to Tab

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"15

V

Continuous Drain Currenta

TC = 25_C

ID

65

Continuous Drain Currenta

TC = 100_C

ID

42

A

Pulsed Drain Current

IDM

200

A

Continuous Source Current (Diode Conduction)a

IS

65

Maximum Power Dissipation

TC = 25_C

PD

71

W

Maximum Power Dissipation

TA = 25_C

PD

8.3b, c

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

b

t v 10 sec.

15

18

Maximum Junction-to-Ambientb

Steady State

RthJA

40

50

_C/W

Maximum Junction-to-Case

RthJC

1.75

2.1

Notes

a.

Package Limited

b.

Surface Mounted on 1” x 1” FR4 Board

c.

t v 10 sec

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UT60N03L-TN3-R

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