UT60N03L-TN3-R datasheet(2/6 Pages) VBSEMI

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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 125_C

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 4.5 V

VGS = 4.5 V, ID = 20 A

0.0045

0.006

Drain-Source On-State Resistanceb

rDS(on)

VGS = 4.5 V, ID = 20 A, TJ = 125_C

0.0055

0.007

DS(on)

VGS = 2.5 V, ID = 20 A

0.006

0.008

Forward Transconductanceb

gfs

VDS = 5 V, ID = 40 A

Dynamica

Input Capacitance

Ciss

3660

Output Capacitance

Coss

VGS = 0 V, VDS = 20 V, f = 1 MHz

730

Reverse Transfer Capacitance

Crss

375

Total Gate Chargec

Gate-Source Chargec

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 40 A

Gate-Drain Chargec

Qgd

, GS

, D

Gate Resistance

3.7

Turn-On Delay Timec

td(on)

Rise Timec

VDD = 10 V, RL = 0.25 W

120

190

Turn-Off Delay Timec

td(off)

VDD = 10 V, RL = 0.25 W

ID ^ 40 A, VGEN = 4.5 V, RG = 2.5 W

Fall Timec

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed Current

ISM

100

Diode Forward Voltageb

VSD

IF = 100 A, VGS = 0 V

1.2

1.5

Source-Drain Reverse Recovery Time

trr

IF = 40 A, di/dt = 100 A/ms

Notes

Guaranteed by design, not subject to production testing.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Independent of operating temperature.

1.5

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www.VBsemi.tw

UT60N03L-TN3-R

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