UD4840L-S08-R datasheet(3/4 Pages) DOINGTER

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UD4840L-S08-R 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명	UD4840L-S08-R

상세설명	Dual N-Channel MOSFET uses advanced trench technology

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제조업체	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Ism

Pulsed Source Current

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Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

VG=VD=0V , Force Current

Repetitive Rating : Pulsed width limited by maximum junction temperature.

The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

Essentially independent of operating temperature.

Fig.1 Continuous Drain Current vs. TC

Fig.3 Normalized Vth vs. TJ

TC , Case Temperature (℃)

Fig.2 Normalized RDSON vs. TJ

TJ , Junction Temperature (℃)

Qg , Gate Charge (nC)

Fig.4 Gate Charge Waveform

TJ , Junction Temperature (℃)

UD4840L-S08-R

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