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UD4840L-S08-R 데이터시트(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 UD4840L-S08-R
상세설명  Dual N-Channel MOSFET uses advanced trench technology
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UD4840L-S08-R 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=40V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
1.6
2.5
V
RDS(ON)
Drain-Source On Resistance
3
VGS=10V,ID=3A
11
28
32
mΩ
GFS
Forward Transconductance
VDS=10V, ID=3A
---
6.5
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
420
800
pF
Coss
Output Capacitance
---
65
120
Crss
Reverse Transfer Capacitance
---
40
80
Switching Characteristics
4
td(on)
Turn-On Delay Time
2.3
VDS=20V, ID=1A
RGEN=25Ω. VGS=4.5V,
---
3.2
6
ns
tr
Rise Time
2.3
---
8.6
16
ns
td(off)
Turn-Off Delay Time
2.3
---
18
36
ns
tf
Fall Time
2.3
---
6
12
ns
Qg
Total Gate Charge
2.3
VGS=4.5V, VDS=20V,
ID=3A
---
5.2
10
nC
Qgs
Gate-Source
Charge
2.3
---
1.2
2.4
nC
Qgd
Gate-Drain “Miller” Charge
2.3
---
2.5
5
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=1A
---
0.7
1
V
ls
Maximum Body-Diode Continuous Current
---
---
5
A
UD4840L-S08-R



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