UD4840L-S08-R datasheet(1/4 Pages) DOINGTER

부품명	UD4840L-S08-R

상세설명	Dual N-Channel MOSFET uses advanced trench technology

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제조업체	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This Dual N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=40V,ID=7A,RDS(ON)<32mΩ@VGS=4.5V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current

7

A

Continuous Drain Current-TC=100℃

3

Pulsed Drain Current

1

20

EAS

Single Pulse Avalanche Energy

---

mJ

PD

Power Dissipation

1.56

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJL

Maximum Junction-to-Lead

---

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

80

G2

D1

D2

S1

G1

S2

UD4840L-S08-R

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