PSD813F1AV-12MIT datasheet(97/110 Pages) STMICROELECTRONICS

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PSD813F1V

Figure 51. Reset (RESET) Timing

Table 67. Reset (RESET) Timing (5V devices)

Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.

2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in READ Mode.

Table 68. Reset (RESET) Timing (3V devices)

Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.

2. tNLNH-PO is 10ms for devices manufactured before the rev.A.

Table 69. VSTBYON Timing (5V devices)

Table 70. VSTBYON Timing (3V devices)

Symbol

Parameter

Conditions

Min

Max

Unit

tNLNH

RESET Active Low Time 1

150

tNLNH–PO

Power On Reset Active Low Time

tOPR

RESET High to Operational Device

120

Symbol

Parameter

Conditions

Min

Max

Unit

tNLNH

RESET Active Low Time 1

300

tNLNH–PO

Power On Reset Active Low Time2

1ms

tOPR

RESET High to Operational Device

300

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tBVBH

VSTBY Detection to VSTBYON Output High

(Note 1)

µs

tBXBL

VSTBY Off Detection to VSTBYON Output

Low

(Note 1)

µs

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tBVBH

VSTBY Detection to VSTBYON Output High

(Note 1)

2.0

µs

tBXBL

VSTBY Off Detection to VSTBYON Output

Low

(Note 1)

2.0

µs

tNLNH-PO

tOPR

AI02866b

RESET

tNLNH

tNLNH-A

tOPR

VCC

CC(min)

Power-On Reset

Warm Reset

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