ACE25AB400G

Serial NOR Flash Memory 4M bits 3.0V Dual I/O Serial Flash Memory with 4KB Uniform Sector

VER 1.1

28

Electrical Characteristics

Power-On Timing

Table3. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min

Max

Unit

t

VSL

VCC(min) To CS# Low

10

us

t

PUW

Time Delay Before Write Instruction

1

10

ms

V

WI

Write Inhibit Voltage

1

2.5

V

Note: An interval of 10ms (minimum) is required between the power-down state and next power-on-reset

event.

Initial Delivery State

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The

Status Register contains 00H (all Status Register bits are 0).

Data Retention and Endurance

Parameter

Typical

Unit

Minimum Pattern Data Retention Time

20

Years

Erase/Program Endurance

100K

Cycles

Latch up Characteristics

Parameter

Min

Max

Input Voltage Respect To VSS On I/O Pins

-1.0V

VCC+1.0V

VCC Current

-100mA

100mA