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AP9985M 데이터시트(PDF) 5 Page - Advanced Power Electronics Corp. |
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AP9985M 데이터시트(HTML) 5 Page - Advanced Power Electronics Corp. |
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5 / 6 page ![]() AP9985M Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.5 1 1.5 2 2.5 3 3.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) 0 3 6 9 12 0 5 10 15 20 25 Q G , Total Gate Charge (nC) I D =10A VDS =12V VDS =16V VDS =20V 10 100 1000 10000 1 7 13 19 25 31 V DS (V) f=1.0MHz Ciss Coss Crss 0.01 0.1 1 10 100 0 0.4 0.8 1.2 V SD (V) Tj=25 o C Tj=150 o C |
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