AP9985M datasheet(2/6 Pages) A-POWER

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Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.032

-V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=10A

mΩ

VGS=4.5V, ID=5A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=10A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=40V, VGS=0V

Drain-Source Leakage Current (Tj=70

oC)

VDS=32V ,VGS=0V

IGSS

Gate-Source Leakage

VGS= ± 20V

±100

Total Gate Charge

ID=10A

14.7

Qgs

Gate-Source Charge

VDS=20V

7.1

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

6.8

td(on)

Turn-on Delay Time

VDS=20V

11.5

Rise Time

ID=1A

6.3

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=10V

28.2

Fall Time

RD=20Ω

12.6

Ciss

Input Capacitance

VGS=0V

1725

Coss

Output Capacitance

VDS=25V

235

Crss

Reverse Transfer Capacitance

f=1.0MHz

145

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.3V

2.3

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

Tj=25℃, IS=2.3A, VGS=0V

1.3

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10 sec.

AP9985M

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