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AP9985M 데이터시트(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9985M 데이터시트(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 6 page ![]() Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance ▼ Low On-Resistance ▼ Low On-Resistance ▼ Low On-Resistance BVDSS 40V ▼ Fast Switching Speed ▼ Fast Switching Speed ▼ Fast Switching Speed ▼ Fast Switching Speed RDS(ON) 15mΩ ▼ Surface Mount Package ▼ Surface Mount Package ▼ Surface Mount Package ▼ Surface Mount Package ID 10A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 50 ℃/W Data and specifications subject to change without notice 200120031 AP9985M Parameter Rating Drain-Source Voltage 40 Gate-Source Voltage ± 20 Continuous Drain Current 3 10 Continuous Drain Current 3 8 Pulsed Drain Current 1 48 Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S S S G D D D D SO-8 G D S |
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