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MMPF0200Z 데이터시트(PDF) 62 Page - NXP Semiconductors

부품명 MMPF0200Z
상세설명  12 Channel Configurable Power Management Integrated Circuit
PDF  118 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMPF0200Z 데이터시트(HTML) 62 Page - NXP Semiconductors

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Analog Integrated Circuit Device Data
62
Freescale Semiconductor
PF0200Z
Functional Block Requirements and Behaviors
Power Generation
Figure 17. SW3AB Single Phase Efficiency Waveforms
SWITCH MODE SUPPLY SW3A/B (CONTINUED)
SW3A N-MOSFET Leakage Current
VIN = VINSW3A = 4.5 V
ISW3ANQ
––
2.5
µA
SW3B P-MOSFET RDS(on)
at VIN = VINSW3B = 3.3 V
RONSW3BP
–
215
245
m
SW3B N-MOSFET RDS(on)
at VIN = VINSW3B = 3.3 V
RONSW3BN
–
258
326
m
SW3B P-MOSFET Leakage Current
VIN = VINSW3B = 4.5 V
ISW3BPQ
––
7.5
µA
SW3B N-MOSFET Leakage Current
VIN = VINSW3B = 4.5 V
ISW3BPQ
––
2.5
µA
Discharge Resistance
RSW3xDIS
–
600
–
Notes
45.
When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V.
46.
The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation:
(VINSW3x - VSW3x) = ISW3x* (DCR of Inductor +RONSW3xP + PCB trace resistance).
Table 71. SW3A/B Electrical Characteristics (continued)
All parameters are specified at TA = -40 to 85 °C, VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA,
SW3x_PWRSTG[2:0] = [111], typical external component values, fSW3x = 2.0 MHz, single phase and independent mode unless,
otherwise noted. Typical values are characterized at VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA,
SW3x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.
P
arameter
Symbol
Min
Typ
Max
Unit
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
1000
Ef
fi
ci
e
n
cy
 (%
)
Load Current (mA)
PFM ‐ Vout = 1.5V
APS ‐ Vout = 1.5V
PWM ‐ Vout = 1.5V



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