MMPF0200Z datasheet(65/118 Pages) NXP

65 / 118 page

Analog Integrated Circuit Device Data



Freescale Semiconductor

PF0200Z

Functional Block Requirements and Behaviors

Power Generation

Start-up Overshoot

ISWBST = 0.0 mA

VSWBSTOSH

–

500

Transient Load Response

ISWBST from 1.0 to 100 mA in 1.0 µs

Maximum transient Amplitude

VSWBSTTR

–

300

Transient Load Response

ISWBST from 100 to 1.0 mA in 1.0 µs

Maximum transient Amplitude

VSWBSTTR

–

300

SWITCH MODE SUPPLY SWBST (CONTINUED)

Transient Load Response

ISWBST from 1.0 to 100 mA in 1.0 µs

Time to settle 80% of transient

tSWBSTTR

–

500

µs

Transient Load Response

ISWBST from 100 to 1.0 mA in 1.0 µs

Time to settle 80% of transient

tSWBSTTR

––

NMOS Off Leakage

SWBSTIN = 4.5 V, SWBSTMODE [1:0] = 00

ISWBSTHSQ

–1.0

5.0

µA

Turn-on Time

Enable to 90% of VSWBST, ISWBST = 0.0 mA

tONSWBST

––

2.0

Switching Frequency

fSWBST

–2.0

–

MHz

Efficiency

ISWBST = ISWBSTMAX

SWBST

–86–

Notes

49.

Only in Auto mode.

Table 74. SWBST Electrical Specifications (continued)

All parameters are specified at TA = -40 to 85 °C, VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, typical external

component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at VIN = VINSWBST = 3.6 V,

VSWBST = 5.0 V, ISWBST = 100 mA, and 25 °C, unless otherwise noted.

Parameters

Symbol

Min

Typ

Max

Units

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