STM32G070CB datasheet(43/93 Pages) STMICROELECTRONICS

43 / 93 page

DS12766 Rev 2

43/93

STM32G070CB/KB/RB

Electrical characteristics

5.3

Operating conditions

5.3.1

General operating conditions

5.3.2

Operating conditions at power-up / power-down

The parameters given in Table 21 are derived from tests performed under the ambient

temperature condition summarized in Table 20.

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 22 are derived from tests performed under the ambient

temperature conditions summarized in Table 20.

Table 19. Thermal characteristics

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

–65 to +150

°C

Maximum junction temperature

150

°C

Table 20. General operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

fHCLK

Internal AHB clock frequency

MHz

fPCLK

Internal APB clock frequency

VDD/DDA Supply voltage

2.0(1)

3.6

VBAT

Backup operating voltage

1.55

3.6

VIN

I/O input voltage

-0.3

Min(VDD + 3.6, 5.5)(2)

Ambient temperature(3)

-40

°C

Junction temperature

-40

105

°C

1. When RESET is released functionality is guaranteed down to VPDR min.

2. For operation with voltage higher than VDD +0.3 V, the internal pull-up and pull-down resistors must be disabled.

3. The TA(max) applies to PD(max). At PD < PD(max) the ambient temperature is allowed to go higher than TA(max) provided

that the junction temperature TJ does not exceed TJ(max). Refer to Section 6.4: Thermal characteristics.

Table 21. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD slew rate

VDD rising

∞

µs/V

VDD falling

∞

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