STM32WB10CC datasheet(57/110 Pages) STMICROELECTRONICS

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DS13259 Rev 2

57/110

STM32WB10CC

Electrical characteristics

102

6.3.3

RF BLE characteristics

RF characteristics are given at 1 Mbps, unless otherwise specified.

Ambient temperature for



suffix 5 version

Maximum power dissipation

–10

°C

Low-power dissipation(4)

105

Junction temperature range

Suffix 5 version

-10

105

1. When RESET is released functionality is guaranteed down to VBOR0 Min.

2. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.

Maximum I/O input voltage is the smallest value between min (VDD, VDDA) + 3.6 V and 5.5 V.

3. For operation with voltage higher than min (VDD, VDDA) + 0.3 V, the internal pull-up and pull-down resistors must be

disabled.

4. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.2:

Thermal characteristics).

Table 20. General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Max

Unit

Table 21. RF transmitter BLE characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Fop

Frequency operating range

2402

2480

MHz

Fxtal

Crystal frequency

∆F

Delta frequency

250

KHz

Rgfsk

On air data rate

Mbps

PLLres

RF channel spacing

MHz

Table 22. RF transmitter BLE characteristics (1 Mbps)(1)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Prf

Maximum output power

4.0

dBm

0 dBm output power

Minimum output power

-20

Pband

Output power variation over the band

Tx = 0 dBm - Typical

-0.5

0.4

BW6dB

6 dB signal bandwidth

Tx = max output power

670

KHz

IBSE

In band spurious emission

2 MHz

Bluetooth® Low Energy:-20 dBm

-50

dBm

≥ 3 MHz

Bluetooth® Low Energy: -30 dBm

-53

Frequency drift

Bluetooth® Low Energy: ±50 kHz

-50

+50

KHz

maxdr

Maximum drift rate

Bluetooth® Low Energy:



±20 KHz / 50 µs

-20

+20

KHz/

50 µs

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