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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32WB35CC 데이터시트(PDF) 83 Page - STMicroelectronics |
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STM32WB35CC 데이터시트(HTML) 83 Page - STMicroelectronics |
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83 / 193 page  DS11929 Rev 11 83/193 STM32WB55xx STM32WB35xx Electrical characteristics 169 Figure 17. Power supply scheme (UFBGA129 and WLCSP100 packages) 1. The value of L1 depends upon the frequency, as indicated in Table 6. 2. For UFBGA129 package VDD_DCAPx and VSS_DCAPx balls are connected to VDD and VSS internally, to simplify the 2-layer board layout and especially the ground plane below the BGA. VDD power supply can be made with a single connection to the center of the BGA on the board bottom layer. The decoupling 100 nF capacitors are connected without cutting the board ground plane. 3. n x 100 nF only for WLCSP package. MS53132V2 VDD Backup circuitry (LSE, RTC and backup registers) Kernel logic (CPU, digital and memories IO logic IN OUT Regulator GPIOs 1.55 to 3.6 V n x 100 nF + 1 x 4.7 μF (3) n x VSS n x VDD VBAT VCORE Power switch VDDIO1 ADCs OPAMPs COMPs VREFBUF VREF+ VREF- VDDA 10 nF + 1 μF VDDA VSSA VREF 100 nF 1 μF SMPS Regulator VDDSMPS VLXSMPS VFBSMPS VSSSMPS 4.7 μF VDD L1 (1) 4.7 μF SMPS VSS_DCAPx (2) VDD_DCAPx (2) 1 x 100 nF USB transceiver VDDUSB VDD 100 nF Radio 100 nF + 100 pF VDDRF VSSRF VDD |
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