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STM32WB35CC 데이터시트(PDF) 96 Page - STMicroelectronics |
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STM32WB35CC 데이터시트(HTML) 96 Page - STMicroelectronics |
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96 / 193 page ![]() Electrical characteristics STM32WB55xx STM32WB35xx 96/193 DS11929 Rev 11 6.3.5 Operating conditions at power-up / power-down The parameters given in Table 34 are derived from tests performed under the ambient temperature condition summarized in Table 24. 6.3.6 Embedded reset and power control block characteristics The parameters given in Table 35 are derived from tests performed under the ambient temperature conditions summarized in Table 24: General operating conditions. Table 34. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - - ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 10 ∞ tVDDUSB VDDUSB rise time rate - 0 ∞ VDDUSB fall time rate 10 ∞ tVDDRF VDDRF rise time rate - - ∞ VDDRF fall time rate - ∞ Table 35. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.70 V Falling edge 1.60 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.10 2.14 Falling edge 1.96 2.00 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.10 2.15 2.19 Falling edge 2.00 2.05 2.10 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 Falling edge 2.15 2.20 2.25 VPVD2 PVD threshold 2 Rising edge 2.41 2.46 2.51 Falling edge 2.31 2.36 2.41 |
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