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STB30N65DM6AG 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STB30N65DM6AG
상세설명  Power MOSFET in a D²PAK package
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB30N65DM6AG 데이터시트(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG290520201145SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp=10 µs
tp=1 µs
tp=100 µs
tp=1 ms
IDM
V(BR)DSS
Operation
in
this
area
is limited
by
R
DS(on)
RDS(on) max.
single pulse
TC = 25 °C
TJ ≤ 150 °C
tp=10 ms
Figure 2. Maximum transient thermal impedance
GADG290520201045ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
Single pulse
0.05
duty=0.5
3
2
4
ton
T
duty = ton / T
RthJC = 0.56 °C/W
ZthJC
(°C/W)
Figure 3. Typical output characteristics
GADG220120200821OCH
100
80
60
40
20
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS=6 V
VGS=7 V
VGS=8 V
VGS=9, 10 V
Figure 4. Typical transfer characteristics
GADG220120200822TCH
100
80
60
40
20
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Typical drain-source on-resistance
GADG070620210930RID
105
104
103
102
101
100
99
0
5
10
15
20
25
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
Figure 6. Typical gate charge characteristics
GADG220120200832QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
10
20
30
40
50
VGS
(V)
VDS
(V)
Qg (nC)
Qg
Qgd
Qgs
VDD = 520 V
ID = 28 A
STB30N65DM6AG
Electrical characteristics
(curves)
DS13770 - Rev 1
page 5/15



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