| 전자부품 데이터시트 검색엔진 |
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STB30N65DM6AG 데이터시트(PDF) 6 Page - STMicroelectronics |
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STB30N65DM6AG 데이터시트(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Figure 7. Typical capacitance characteristics GADG220120200825CVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f=1MHz Figure 8. Normalized gate threshold vs temperature GADG220120200826VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) TJ (°C) ID =250µA Figure 9. Normalized on-resistance vs temperature GADG220120200827RON 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 RDS(on) (norm.) TJ (°C) VGS = 10 V Figure 10. Typical output capacitance stored energy GADG220120200830EOS 20 16 12 8 4 0 0 100 200 300 400 500 600 (uJ) VDS (V) EOSS Figure 11. Normalized breakdown voltage vs temperature GADG220120200827BDV 1.10 1.05 1.00 0.95 0.90 0.85 -75 -25 25 75 125 V(BR)DSS (norm.) TJ (°C) ID = 1 mA Figure 12. Typical reverse diode forward characteristics GADG220120200829SDF 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 4 8 12 16 20 24 28 VSD (V) ISD (A) TJ =-50°C TJ =25°C TJ =150°C STB30N65DM6AG Electrical characteristics (curves) DS13770 - Rev 1 page 6/15 |
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