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STB30N65DM6AG 데이터시트(PDF) 1 Page - STMicroelectronics |
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STB30N65DM6AG 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() ² D PAK 1 3 TAB 2 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STB30N65DM6AG 650 V 115 mΩ 28 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB30N65DM6AG Product summary Order code STB30N65DM6AG Marking 30N65DM6 Package D²PAK Packing Tape and reel Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a D²PAK package STB30N65DM6AG Datasheet DS13770 - Rev 1 - June 2021 For further information contact your local STMicroelectronics sales office. www.st.com |
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